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With the increasing interest in finding novel methods of computing comes a complementary interest in studying the potentially useful electronic properties of Transition Metal Oxides. Some such oxides of particular interest are those which undergo a temperature-dependent metal to insulator transition (MIT), where this change in resistivity allows these materials to exhibit a property known as negative differential resistance, which makes them useful for implementation into memristive devices. These memristors are integrally important to a new circuit design that is engineered to emulate the spike-based processing of biological neurons, known as a neuristor. One important element that must be understood before we are able to adequately scale these devices down to practical sizes is the underlying nature of this transition, whether it is a structural distortion or a purely electronic transition, or some combination of the two. To that end, we used various spectroscopic and computational techniques to study the MIT's of two promising materials which are known to undergo this type of metal to insulator transition, VO2, and Ti2O3 to find the underlying mechanisms driving their electronic transitions.



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Understanding the Metal-Insulator Transition in Certain Metal-Oxides