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visible-light irradiation; thin-films; photoelectrochemical properties;photocatalytic properties; water; efficient; ellipsometry; spectroscopy; temperature;fabrication


Single-phase epitaxial films of the monoclinic polymorph of BiVO4 were synthesized by reactive molecular-beam epitaxy under adsorption-controlled conditions. The BiVO4 films were grown on (001) yttria-stabilized cubic zirconia (YSZ) substrates. Four-circle x-ray diffraction, scanning transmission electron microscopy (STEM), and Raman spectroscopy confirm the epitaxial growth of monoclinic BiVO4 with an atomically abrupt interface and orientation relationship (001)BiVO4 parallel to (001)(YSZ) with [100]BiVO4 parallel to [100](YSZ). Spectroscopic ellipsometry, STEM electron energy loss spectroscopy (STEM-EELS), and x-ray absorption spectroscopy indicate that the films have a direct band gap of 2.5 +/- 0.1 eV.

Publisher Attribution

Stoughton, S., Showak, M., Mao, Q., Koirala, P., Hillsberry, D. A., Sallis, S., ... & Podraza, N. J. (2013). Adsorption-controlled growth of BiVO4 by molecular-beam epitaxy. APL Materials, 1(4), 042112.

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Physics Commons



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