Document Type
Article
Publication Date
2013
Keywords
visible-light irradiation; thin-films; photoelectrochemical properties;photocatalytic properties; water; efficient; ellipsometry; spectroscopy; temperature;fabrication
Abstract
Single-phase epitaxial films of the monoclinic polymorph of BiVO4 were synthesized by reactive molecular-beam epitaxy under adsorption-controlled conditions. The BiVO4 films were grown on (001) yttria-stabilized cubic zirconia (YSZ) substrates. Four-circle x-ray diffraction, scanning transmission electron microscopy (STEM), and Raman spectroscopy confirm the epitaxial growth of monoclinic BiVO4 with an atomically abrupt interface and orientation relationship (001)BiVO4 parallel to (001)(YSZ) with [100]BiVO4 parallel to [100](YSZ). Spectroscopic ellipsometry, STEM electron energy loss spectroscopy (STEM-EELS), and x-ray absorption spectroscopy indicate that the films have a direct band gap of 2.5 +/- 0.1 eV.
Publisher Attribution
Stoughton, S., Showak, M., Mao, Q., Koirala, P., Hillsberry, D. A., Sallis, S., ... & Podraza, N. J. (2013). Adsorption-controlled growth of BiVO4 by molecular-beam epitaxy. APL Materials, 1(4), 042112.
Recommended Citation
Stoughton, S.; Showak, M.; ,, Q.; Koirala, P.; Hillsberry, D. A.; Sallis, Shawn; Kourkoutis, L. F.; Nguyen, K.; Piper, Louis; Tenne, D. A.; Podraza, N. J.; Muller, D. A.; Adamo, C.; and Schlom, D. G., "Adsorption-controlled growth of BiVO4 by molecular-beam epitaxy" (2013). Physics, Applied Physics and Astronomy Faculty Scholarship. 5.
https://orb.binghamton.edu/physics_fac/5